| PartNumber | SPD04N80C3ATMA1 | SPD04N80C3BTMA1 |
| Description | MOSFET LOW POWER_LEGACY | MOSFET N-Ch 800V 4A DPAK-2 CoolMOS C3 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | 800 V |
| Id Continuous Drain Current | 4 A | 4 A |
| Rds On Drain Source Resistance | 1.1 Ohms | 1.1 Ohms |
| Vgs th Gate Source Threshold Voltage | 2.1 V | 2.1 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 31 nC | 31 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 63 W | 63 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | CoolMOS | - |
| Packaging | Reel | Reel |
| Height | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm |
| Series | CoolMOS C3 | XPD04N80 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 12 ns | 12 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 15 ns | 15 ns |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 72 ns | 72 ns |
| Typical Turn On Delay Time | 25 ns | 25 ns |
| Part # Aliases | SP001117768 SPD04N80C3 | SP000315410 SPD04N80C3 SPD04N80C3XT |
| Unit Weight | 0.139332 oz | 0.139332 oz |