SPD06N6

SPD06N60C3ATMA1 vs SPD06N60C3 vs SPD06N60C3BTMA1

 
PartNumberSPD06N60C3ATMA1SPD06N60C3SPD06N60C3BTMA1
DescriptionMOSFET LOW POWER_LEGACYMOSFET N-Ch 650V 6.2A DPAK-2 CoolMOS C3MOSFET N-CH 650V 6.2A TO-252
ManufacturerInfineonINF-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current6.2 A--
Rds On Drain Source Resistance680 mOhms--
Vgs th Gate Source Threshold Voltage2.1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge31 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation74 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameCoolMOSCoolMOS-
PackagingReelReel-
Height2.3 mm--
Length6.5 mm--
SeriesCoolMOS C3CoolMOS C3-
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm--
BrandInfineon Technologies--
Forward Transconductance Min5.6 S--
Fall Time10 ns10 ns-
Product TypeMOSFET--
Rise Time12 ns12 ns-
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time52 ns52 ns-
Typical Turn On Delay Time7 ns7 ns-
Part # AliasesSP001117770 SPD06N60C3--
Unit Weight0.139332 oz0.139332 oz-
Part Aliases-SP000307394 SPD06N60C3BTMA1 SPD06N60C3XT-
Package Case-TO-252-3-
Pd Power Dissipation-74 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-6.2 A-
Vds Drain Source Breakdown Voltage-650 V-
Rds On Drain Source Resistance-750 mOhms-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
SPD06N60C3ATMA1 MOSFET LOW POWER_LEGACY
SPD06N60C3ATMA1 MOSFET N-CH 600V 6.2A TO-252
SPD06N60C3BTMA1 MOSFET N-CH 650V 6.2A TO-252
SPD06N60C3 MOSFET N-Ch 650V 6.2A DPAK-2 CoolMOS C3
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