 |  | |
| PartNumber | SPD08P06PGXT | SPD08PO6P |
| Description | MOSFET P-Ch -60V -8.8A DPAK-2 | |
| Manufacturer | Infineon | - |
| Product Category | MOSFET | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | TO-252-3 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | - |
| Id Continuous Drain Current | 8.83 A | - |
| Rds On Drain Source Resistance | 230 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | - 13 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 175 C | - |
| Pd Power Dissipation | 42 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Qualification | AEC-Q101 | - |
| Packaging | Reel | - |
| Height | 2.3 mm | - |
| Length | 6.5 mm | - |
| Transistor Type | 1 P-Channel | - |
| Width | 6.22 mm | - |
| Brand | Infineon Technologies | - |
| Forward Transconductance Min | 2.5 S | - |
| Fall Time | 14 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 46 ns | - |
| Factory Pack Quantity | 2500 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 48 ns | - |
| Typical Turn On Delay Time | 16 ns | - |
| Part # Aliases | G SP000450534 SPD08P06P SPD08P06PGBTMA1 | - |
| Unit Weight | 0.011993 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
SPD08P06PGXT | MOSFET P-Ch -60V -8.8A DPAK-2 | |
| SPD08PO6P | New and Original |