SQ23

SQ2389ES-T1_GE3 vs SQ2389ES-T1-E3 vs SQ2389ES-T1-GE3

 
PartNumberSQ2389ES-T1_GE3SQ2389ES-T1-E3SQ2389ES-T1-GE3
DescriptionMOSFET -40V Vds +/-20V Vgs AEC-Q101 QualifiedP-CHANNEL 40-V (D-S) 175C MOSF
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current4.1 A--
Rds On Drain Source Resistance94 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge8.2 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation3 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFET--
PackagingReel--
SeriesSQ--
Transistor Type1 P-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min5 S--
Fall Time4 ns--
Product TypeMOSFET--
Rise Time12 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time16 ns--
Typical Turn On Delay Time7 ns--
Unit Weight0.000282 oz--
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SQ2389ES-T1_GE3 MOSFET -40V Vds +/-20V Vgs AEC-Q101 Qualified
SQ2398ES-T1_GE3 MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified
SQ2389ES-T1-E3 New and Original
SQ2389ES-T1-GE3 P-CHANNEL 40-V (D-S) 175C MOSF
SQ2391ES New and Original
SQ2398ES New and Original
SQ2398ES-T1-GE3 N-CHANNEL 100-V (D-S) 175C
Vishay
Vishay
SQ2389ES-T1_GE3 MOSFET P-CHAN 40V SO23
SQ2398ES-T1_GE3 MOSFET N-CH 100V 1.6A SOT23-3
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