SQ492

SQ4920EY-T1-GE3 vs SQ4920EY vs SQ4920EY-T1

 
PartNumberSQ4920EY-T1-GE3SQ4920EYSQ4920EY-T1
DescriptionMOSFET RECOMMENDED ALT 78-SQ4920EY-T1_GE3
ManufacturerVishay-Vishay Siliconix
Product CategoryMOSFET-FETs - Arrays
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSO-8--
QualificationAEC-Q101--
TradenameTrenchFET-TrenchFET
PackagingReel-Tape & Reel (TR)
Height1.75 mm--
Length4.9 mm--
SeriesSQ-TrenchFETR
Width3.9 mm--
BrandVishay / Siliconix--
Product TypeMOSFET--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Part # AliasesSQ4920EY-GE3--
Unit Weight0.017870 oz-0.017870 oz
Package Case--8-SOIC (0.154", 3.90mm Width)
Operating Temperature---55°C ~ 175°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--8-SO
Configuration--Dual
FET Type--2 N-Channel (Dual)
Power Max--4.4W
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds--1465pF @ 15V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--8A
Rds On Max Id Vgs--14.5 mOhm @ 6A, 10V
Vgs th Max Id--2.5V @ 250μA
Gate Charge Qg Vgs--30nC @ 10V
Pd Power Dissipation--4.4 W
Maximum Operating Temperature--+ 175 C
Minimum Operating Temperature--- 55 C
Fall Time--8 ns
Rise Time--10 ns
Vgs Gate Source Voltage--+/- 20 V
Id Continuous Drain Current--7.2 A
Vds Drain Source Breakdown Voltage--30 V
Vgs th Gate Source Threshold Voltage--2 V
Rds On Drain Source Resistance--14.5 mOhms
Transistor Polarity--N-Channel
Typical Turn Off Delay Time--25 ns
Typical Turn On Delay Time--7 ns
Qg Gate Charge--19.7 nC
Forward Transconductance Min--43 S
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SQ4920EY-T1_GE3 MOSFET 30V 8A 4.4W AEC-Q101 Qualified
SQ4920EY-T1-GE3 MOSFET RECOMMENDED ALT 78-SQ4920EY-T1_GE3
SQ4920EY-T1-GE3-CUT TAPE New and Original
SQ4920EY New and Original
SQ4920EY-T1 New and Original
SQ4920EY-T1-GE3 MOSFET 30V 8A 4.4W
Vishay
Vishay
SQ4920EY-T1_GE3 MOSFET 2N-CH 30V 8A 8SO
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