 | | | |
| PartNumber | SQ4946AEY | SQ4946AEY-T1 | SQ4946AEY-T1-E3 |
| Description | |||
| Manufacturer | - | Vishay Siliconix | - |
| Product Category | - | FETs - Arrays | - |
| Series | - | TrenchFETR | - |
| Packaging | - | Digi-ReelR Alternate Packaging | - |
| Unit Weight | - | 0.017870 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Tradename | - | TrenchFET | - |
| Package Case | - | 8-SOIC (0.154", 3.90mm Width) | - |
| Technology | - | Si | - |
| Operating Temperature | - | -55°C ~ 175°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | 8-SO | - |
| Configuration | - | Dual | - |
| FET Type | - | 2 N-Channel (Dual) | - |
| Power Max | - | 4W | - |
| Drain to Source Voltage Vdss | - | 60V | - |
| Input Capacitance Ciss Vds | - | 750pF @ 25V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 7A | - |
| Rds On Max Id Vgs | - | 40 mOhm @ 4.5A, 10V | - |
| Vgs th Max Id | - | 2.5V @ 250μA | - |
| Gate Charge Qg Vgs | - | 18nC @ 10V | - |
| Pd Power Dissipation | - | 4 W | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 2.1 ns | - |
| Rise Time | - | 3.3 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 7.5 A | - |
| Vds Drain Source Breakdown Voltage | - | 60 V | - |
| Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
| Rds On Drain Source Resistance | - | 33 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 22.4 ns | - |
| Typical Turn On Delay Time | - | 7 ns | - |
| Qg Gate Charge | - | 11.7 nC | - |
| Forward Transconductance Min | - | 15 S | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| SQ4946AEY-T1_G | New and Original | ||
| SQ4946AEY | New and Original | ||
| SQ4946AEY-T1 | New and Original | ||
| SQ4946AEY-T1-E3 | New and Original | ||
| SQ4946AEY-T1-GE3 | Trans MOSFET N-CH 60V 7A Automotive 8-Pin SOIC N T/R | ||
| SQ4946AEYT1GE3 | Small Signal Field-Effect Transistor, 7A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SQ4946EY-T1-GE3 | New and Original | ||
Vishay |
SQ4946AEY-T1_GE3 | MOSFET 2N-CH 60V 7A | |
| SQ4946EY-T1-E3 | MOSFET 2N-CH 60V 4.5A 8SOIC |