| PartNumber | SQD100N04-3m6L_GE3 | SQD100N04-3M6-GE3 | SQD100N04-3M6L-GE3 |
| Description | MOSFET N-Channel 40V AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 78-SQD100N04-3M6_GE3 | MOSFET RECOMMENDED ALT 78-SQD100N04-3M6LGE |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-252-3 | - | TO-252-3 |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 3 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 130 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 136 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SQ | SQ | SQ |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 105 S | - | - |
| Fall Time | 11 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 11 ns | - | - |
| Factory Pack Quantity | 2000 | 2000 | 2000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 39 ns | - | - |
| Typical Turn On Delay Time | 9 ns | - | - |
| Unit Weight | 0.011993 oz | - | 0.011993 oz |
| Height | - | - | 2.38 mm |
| Length | - | - | 6.73 mm |
| Width | - | - | 6.22 mm |