SQD100N04-3

SQD100N04-3m6L_GE3 vs SQD100N04-3M6-GE3 vs SQD100N04-3M6L-GE3

 
PartNumberSQD100N04-3m6L_GE3SQD100N04-3M6-GE3SQD100N04-3M6L-GE3
DescriptionMOSFET N-Channel 40V AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 78-SQD100N04-3M6_GE3MOSFET RECOMMENDED ALT 78-SQD100N04-3M6LGE
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-252-3-TO-252-3
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance3 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge130 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation136 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101AEC-Q101
TradenameTrenchFETTrenchFETTrenchFET
PackagingReelReelReel
SeriesSQSQSQ
Transistor Type1 N-Channel--
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min105 S--
Fall Time11 ns--
Product TypeMOSFETMOSFETMOSFET
Rise Time11 ns--
Factory Pack Quantity200020002000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time39 ns--
Typical Turn On Delay Time9 ns--
Unit Weight0.011993 oz-0.011993 oz
Height--2.38 mm
Length--6.73 mm
Width--6.22 mm
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SQD100N04-3m6_GE3 MOSFET N-Channel 40V AEC-Q101 Qualified
SQD100N04-3m6L_GE3 MOSFET N-Channel 40V AEC-Q101 Qualified
SQD100N04-3M6-GE3 MOSFET RECOMMENDED ALT 78-SQD100N04-3M6_GE3
SQD100N04-3M6L-GE3 MOSFET RECOMMENDED ALT 78-SQD100N04-3M6LGE
SQD100N04-3M6L-GE3 IGBT Transistors MOSFET N-Channel 40V Automotive MOSFET
SQD100N04-3M6 New and Original
SQD100N04-3M6L New and Original
Vishay
Vishay
SQD100N04-3M6L_GE3 MOSFET N-CH 40V 100A TO252AA
SQD100N04-3M6_GE3 MOSFET N-CH 40V 100A TO252AA
Top