SQD25N06-22L_G

SQD25N06-22L_GE3 vs SQD25N06-22L_GE3-CUT TAPE vs SQD25N06-22L-GE3

 
PartNumberSQD25N06-22L_GE3SQD25N06-22L_GE3-CUT TAPESQD25N06-22L-GE3
DescriptionMOSFET 60V 25A 62W AEC-Q101 QualifiedMOSFET 60V 25A 62W N-Ch Automotive
ManufacturerVishay-
Product CategoryMOSFET-FETs - Single
RoHSE--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-252-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current25 A--
Rds On Drain Source Resistance18 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge50 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation62 W--
ConfigurationSingle-Single
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFET-TrenchFET
PackagingReel-Reel
Height2.38 mm--
Length6.73 mm--
SeriesSQ-SQ Series
Transistor Type1 N-Channel-1 N-Channel
Width6.22 mm--
BrandVishay / Siliconix--
Forward Transconductance Min32 S--
Fall Time6 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time24 ns--
Typical Turn On Delay Time8 ns--
Unit Weight0.002822 oz-0.050717 oz
Package Case--TO-252-3
Pd Power Dissipation--62 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--25 A
Vds Drain Source Breakdown Voltage--60 V
Rds On Drain Source Resistance--22 mOhms
Qg Gate Charge--33 nC
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SQD25N06-22L_GE3 MOSFET 60V 25A 62W AEC-Q101 Qualified
SQD25N06-22L_GE3-CUT TAPE New and Original
SQD25N06-22L-GE3 MOSFET 60V 25A 62W N-Ch Automotive
Vishay
Vishay
SQD25N06-22L_GE3 MOSFET N-CH 60V 25A TO252
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