SQJ912

SQJ912AEP-T1-GE3 vs SQJ912 vs SQJ912AEP-T1

 
PartNumberSQJ912AEP-T1-GE3SQJ912SQJ912AEP-T1
DescriptionMOSFET RECOMMENDED ALT 78-SQJ912AEP-T1_GE3
ManufacturerVishayVishay Siliconix-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SO-8L-4--
QualificationAEC-Q101--
TradenameTrenchFETTrenchFET-
PackagingReelTape & Reel (TR)-
SeriesSQTrenchFETR-
BrandVishay / Siliconix--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Unit Weight0.017870 oz0.017870 oz-
Package Case-PowerPAKR SO-8 Dual-
Operating Temperature--55°C ~ 175°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-PowerPAKR SO-8 Dual-
Configuration-Dual-
FET Type-2 N-Channel (Dual)-
Power Max-48W-
Drain to Source Voltage Vdss-40V-
Input Capacitance Ciss Vds-1835pF @ 20V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-30A-
Rds On Max Id Vgs-9.3 mOhm @ 9.7A, 10V-
Vgs th Max Id-2.5V @ 250μA-
Gate Charge Qg Vgs-38nC @ 10V-
Pd Power Dissipation-48 W-
Maximum Operating Temperature-+ 175 C-
Minimum Operating Temperature-- 55 C-
Fall Time-11 ns-
Rise Time-9 ns-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-30 A-
Vds Drain Source Breakdown Voltage-40 V-
Vgs th Gate Source Threshold Voltage-2 V-
Rds On Drain Source Resistance-9.3 mOhms-
Transistor Polarity-N-Channel-
Typical Turn Off Delay Time-23 ns-
Typical Turn On Delay Time-10 ns-
Qg Gate Charge-25.6 nC-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SQJ912BEP-T1_GE3 MOSFET Dual N-Ch 40V AEC-Q101 Qualified
SQJ912AEP-T1_GE3 MOSFET 40V 30A 48W AEC-Q101 Qualified
SQJ912AEP-T1-GE3 MOSFET RECOMMENDED ALT 78-SQJ912AEP-T1_GE3
SQJ912 New and Original
SQJ912AEP-T1 New and Original
SQJ912AEP-T1-GE3 DUAL N-CHANNEL 40-V (D-S) 175C
SQJ912EP New and Original
SQJ912EP-T1-GE3 MOSFET RECOMMENDED ALT 78-SQJ912AEP-T1_GE3
Vishay
Vishay
SQJ912AEP-T1_GE3 MOSFET 2N-CH 40V 30A PPAK SO-8
SQJ912BEP-T1_GE3 MOSFET N-CH DUAL 40V PPSO-8L
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