SQM120N10

SQM120N10-3m8_GE3 vs SQM120N10-09_GE3 vs SQM120N10-3M8-GE3

 
PartNumberSQM120N10-3m8_GE3SQM120N10-09_GE3SQM120N10-3M8-GE3
DescriptionMOSFET N-Channel 100V AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 78-SQM70060EL_GE3MOSFET RECOMMENDED ALT 78-SQM120N10-3M8_GE3
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current120 A120 A-
Rds On Drain Source Resistance3 mOhms7.9 mOhms-
Vgs th Gate Source Threshold Voltage2.5 V2.5 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge190 nC180 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation375 W375 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101AEC-Q101
TradenameTrenchFETTrenchFETTrenchFET
PackagingReelReelReel
Height4.83 mm--
Length10.67 mm--
SeriesSQSQSQ
Transistor Type1 N-Channel1 N-Channel-
Width9.65 mm--
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min82 S99 S-
Fall Time12 ns16 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time110 ns24 ns-
Factory Pack Quantity800800800
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time40 ns52 ns-
Typical Turn On Delay Time16 ns21 ns-
Unit Weight0.077603 oz0.077603 oz0.068654 oz
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SQM120N10-3m8_GE3 MOSFET N-Channel 100V AEC-Q101 Qualified
SQM120N10-09_GE3 MOSFET RECOMMENDED ALT 78-SQM70060EL_GE3
SQM120N10-3M8-GE3 MOSFET RECOMMENDED ALT 78-SQM120N10-3M8_GE3
SQM120N10-3M8-GE3 N-CHANNEL 100-V (D-S) 175C MOS
SQM120N10-09-GE3 RF Bipolar Transistors MOSFET N-Channel 100V Automotive MOSFET
SQM120N10 New and Original
SQM120N10-09 New and Original
SQM120N10-09-GE3. New and Original
SQM120N10-3M8 New and Original
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