 |  | | |
| PartNumber | SQS850EN-T1_GE3 | SQS850EN | SQS850EN-T1-GE3 |
| Description | MOSFET N-Channel 60V AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 78-SQS850EN-T1_GE3 | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-1212-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 12 A | - | - |
| Rds On Drain Source Resistance | 18 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 41 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 33 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Height | 1.04 mm | - | - |
| Length | 3.3 mm | - | - |
| Series | SQ | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 3.3 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 33 S | - | - |
| Fall Time | 9.3 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9.6 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 25 ns | - | - |
| Typical Turn On Delay Time | 9 ns | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQS850EN-T1_GE3 | MOSFET N-Channel 60V AEC-Q101 Qualified | |
| SQS850EN | New and Original | ||
| SQS850EN-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQS850EN-T1_GE3 | ||
Vishay |
SQS850EN-T1_GE3 | MOSFET N-CH 60V 12A POWERPAK1212 |