SSM3K324R,L

SSM3K324R,LF vs SSM3K324R,LF(T vs SSM3K324R,LT(B

 
PartNumberSSM3K324R,LFSSM3K324R,LF(TSSM3K324R,LT(B
DescriptionMOSFET N-Ch U-MOSVI FET ID 4A 30VDSS 200pF
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23F-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current4 A--
Rds On Drain Source Resistance56 mOhms--
Vgs th Gate Source Threshold Voltage400 mV--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge2.2 nC--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height0.9 mm--
Length2.9 mm--
SeriesU-MOSVI--
Transistor Type1 N-Channel--
Width1.3 mm--
BrandToshiba--
Forward Transconductance Min10.5 S--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time9.5 ns--
Typical Turn On Delay Time9 ns--
Unit Weight0.000282 oz--
メーカー モデル 説明 RFQ
Toshiba
Toshiba
SSM3K324R,LF MOSFET N-Ch U-MOSVI FET ID 4A 30VDSS 200pF
SSM3K324R,LF Darlington Transistors MOSFET N-Ch U-MOSVI FET ID 4A 30VDSS 200pF
SSM3K324R,LF(T ブランドニューオリジナル
SSM3K324R,LT(B ブランドニューオリジナル
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