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| PartNumber | SSM6H19NU,LF | SSM6H19NU,LF(T | SSM6H19NU |
| Description | MOSFET UDFN6 S-MOS TRSTR Pd: 0.5W F: 1MHz | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | UDFN-6 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel, SBD | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 2 A | - | - |
| Rds On Drain Source Resistance | 160 mOhms | - | - |
| Vgs Gate Source Voltage | 3.6 V | - | - |
| Qg Gate Charge | 1 nC | - | - |
| Pd Power Dissipation | 1 W | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | - | - |
| Height | 0.75 mm | - | - |
| Length | 2 mm | - | - |
| Series | SSM6H19 | - | - |
| Transistor Type | 1 N-Channel, SBD | - | - |
| Width | 2 mm | - | - |
| Brand | Toshiba | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |