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| PartNumber | STB12NM60N-1 |
| Description | MOSFET N Ch 1500V 2.5A Hi Vltg Pwr MOSFET |
| Manufacturer | STMicroelectronics |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | Through Hole |
| Package / Case | TO-262-3 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V |
| Id Continuous Drain Current | 10 A |
| Rds On Drain Source Resistance | 410 mOhms |
| Vgs Gate Source Voltage | 25 V |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd Power Dissipation | 90 W |
| Configuration | Single |
| Channel Mode | Enhancement |
| Height | 8.95 mm |
| Length | 10 mm |
| Series | STB12NM60 |
| Transistor Type | 1 N-Channel |
| Width | 4.4 mm |
| Brand | STMicroelectronics |
| Fall Time | 10 ns |
| Product Type | MOSFET |
| Rise Time | 9 ns |
| Factory Pack Quantity | 50 |
| Subcategory | MOSFETs |
| Typical Turn Off Delay Time | 60 ns |
| Typical Turn On Delay Time | 15 ns |
| Unit Weight | 0.050717 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
STMicroelectronics |
STB12NM60N-1 | MOSFET N-CH 600V 10A I2PAK |