STD12N60

STD12N60M2 vs STD12N60DM2AG vs STD12N60M2-CUT TAPE

 
PartNumberSTD12N60M2STD12N60DM2AGSTD12N60M2-CUT TAPE
DescriptionMOSFET N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in DPAK packageMOSFET
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V650 V-
Id Continuous Drain Current9 A10 A-
Rds On Drain Source Resistance395 mOhms440 mOhms-
Vgs th Gate Source Threshold Voltage-3 V-
Qg Gate Charge16 nC14.5 nC-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 150 C-
Pd Power Dissipation85 W110 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameMDmesh--
PackagingReelReel-
Height2.4 mm--
Length6.2 mm--
ProductPower MOSFET--
SeriesSTD12N60M2STD12N60DM2AG-
Transistor Type1 N-Channel1 N-Channel-
TypeMDmesh M2--
Width6.6 mm--
BrandSTMicroelectronicsSTMicroelectronics-
Forward Transconductance Min---
Fall Time-9.5 ns-
Product TypeMOSFETMOSFET-
Rise Time-8 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time-30 ns-
Typical Turn On Delay Time-15 ns-
Unit Weight0.139332 oz--
Vgs Gate Source Voltage-25 V-
Qualification-AEC-Q101-
メーカー モデル 説明 RFQ
STMicroelectronics
STMicroelectronics
STD12N60M2 MOSFET N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in DPAK package
STD12N60DM2AG MOSFET
STD12N60M2 MOSFET N-CHANNEL 600V 9A DPAK
STD12N60M2-CUT TAPE ブランドニューオリジナル
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