STD7NM8

STD7NM80 vs STD7NM80-1

 
PartNumberSTD7NM80STD7NM80-1
DescriptionMOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5AMOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTThrough Hole
Package / CaseTO-252-3TO-251-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage800 V800 V
Id Continuous Drain Current6.5 A6.5 A
Rds On Drain Source Resistance1.05 Ohms1.05 Ohms
Vgs th Gate Source Threshold Voltage4 V-
Vgs Gate Source Voltage30 V30 V
Qg Gate Charge18 nC18 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation90 W90 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameMDmeshMDmesh
PackagingReelTube
Height2.4 mm6.2 mm
Length6.6 mm6.6 mm
SeriesSTD7NM80STD7NM80-1
Transistor Type1 N-Channel1 N-Channel
Width6.2 mm2.4 mm
BrandSTMicroelectronicsSTMicroelectronics
Forward Transconductance Min4 S-
Fall Time10 ns10 ns
Product TypeMOSFETMOSFET
Rise Time8 ns8 ns
Factory Pack Quantity25003000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time35 ns35 ns
Typical Turn On Delay Time20 ns20 ns
Unit Weight0.139332 oz0.139332 oz
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STD7NM80 MOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A
STD7NM80-1 MOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A
STD7NM80-1 MOSFET N-CH 800V 6.5A IPAK
STD7NM80 MOSFET N-CH 800V 6.5A DPAK
STD7NM80-CUT TAPE New and Original
STD7NM801 Power Field-Effect Transistor, 6.5A I(D), 800V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
STD7NM80T4 New and Original
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