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| PartNumber | STGB20M65DF2 | STGB20N40LZ | STGB20H60DF |
| Description | IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low loss | IGBT Transistors 390V IGBT EAS 300mJ Internally Clamped | IGBT Transistors 600 V, 20 A high speed trench gate field-stop IGBT |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Package / Case | D2PAK-3 | D2PAK-3 | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 650 V | 425 V | - |
| Collector Emitter Saturation Voltage | 1.55 V | 1.5 V | - |
| Maximum Gate Emitter Voltage | 20 V | 16 V | - |
| Continuous Collector Current at 25 C | 40 A | - | - |
| Pd Power Dissipation | 166 W | 150 W | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Series | STGB20M65DF2 | STGB20N40LZ | STGB20H60DF |
| Continuous Collector Current Ic Max | 40 A | 25 A | - |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Gate Emitter Leakage Current | 250 uA | 625 uA | - |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Qualification | - | AEC-Q101 | - |
| Packaging | - | Reel | - |
| Unit Weight | - | 0.079014 oz | - |