| PartNumber | STGB30H60DLFB | STGB30H60DFB | STGB30H60DF |
| Description | IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed | IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed | IGBT 600V 60A 260W D2PAK |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | IGBT Transistors | IGBT Transistors | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Package / Case | D2PAK-3 | D2PAK-3 | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V | - |
| Collector Emitter Saturation Voltage | 1.55 V | 1.55 V | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Continuous Collector Current at 25 C | 60 A | 60 A | - |
| Pd Power Dissipation | 260 W | 260 W | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Series | STGB30H60DLFB | STGB30H60DFB | - |
| Packaging | Reel | Reel | - |
| Continuous Collector Current Ic Max | 60 A | 60 A | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Gate Emitter Leakage Current | +/- 250 nA | +/- 250 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | IGBTs | IGBTs | - |