STGB6NC60HDT

STGB6NC60HDT4 vs STGB6NC60HDT4,GB6NC60HD, vs STGB6NC60HDT4,GB6NC60HD,6NC60,6N60

 
PartNumberSTGB6NC60HDT4STGB6NC60HDT4,GB6NC60HD,STGB6NC60HDT4,GB6NC60HD,6NC60,6N60
DescriptionIGBT Transistors PowerMESH TM IGBT
ManufacturerSTMicroelectronics--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseD2PAK-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.7 V--
Maximum Gate Emitter Voltage20 V--
Pd Power Dissipation80 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesSTGB6NC60HDT4--
PackagingReel--
Continuous Collector Current Ic Max15 A--
Height4.6 mm--
Length10.4 mm--
Width9.35 mm--
BrandSTMicroelectronics--
Continuous Collector Current12 A--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity1000--
SubcategoryIGBTs--
Unit Weight0.079014 oz--
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STGB6NC60HDT4 IGBT Transistors PowerMESH TM IGBT
STGB6NC60HDT4 IGBT 600V 15A 56W D2PAK
STGB6NC60HDT4,GB6NC60HD, New and Original
STGB6NC60HDT4,GB6NC60HD,6NC60,6N60 New and Original
STGB6NC60HDT4,GB6NC60HD,6NC60,6N60, New and Original
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