STGW35N

STGW35NB60SD vs STGW35NC120HD vs STGW35NB60S

 
PartNumberSTGW35NB60SDSTGW35NC120HDSTGW35NB60S
DescriptionIGBT Transistors N Ch 35A 600VIGBT Transistors PowerMESH IGBTIGBT 600V 70A 200W TO247
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT TransistorsIGBT TransistorsIGBTs - Single
RoHSYY-
TechnologySiSi-
Package / CaseTO-247-3TO-247-3-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V1200 V-
Maximum Gate Emitter Voltage20 V25 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesSTGW35NB60SDSTGW35NC120HDPowerMESH
PackagingTubeTubeTube
Continuous Collector Current Ic Max70 A58 A-
Height20.15 mm21.09 mm-
Length15.75 mm16.03 mm-
Width5.15 mm5.16 mm-
BrandSTMicroelectronicsSTMicroelectronics-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity60030-
SubcategoryIGBTsIGBTs-
TradenamePowerMESH--
Unit Weight1.340411 oz1.340411 oz-
Package Case--TO-247-3
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--TO-247-3
Power Max--200W
Reverse Recovery Time trr---
Current Collector Ic Max--70A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type---
Current Collector Pulsed Icm--250A
Vce on Max Vge Ic--1.7V @ 15V, 20A
Switching Energy--840μJ (on), 7.4mJ (off)
Gate Charge--83nC
Td on off 25°C--92ns/1.1μs
Test Condition--480V, 20A, 100 Ohm, 15V
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STGW35NB60SD IGBT Transistors N Ch 35A 600V
STGW35NC120HD IGBT Transistors PowerMESH IGBT
STGW35NC60WD IGBT Transistors 40A 600V N-Channel Ultra fast-switching
STGW35NB60SD IGBT Transistors N Ch 35A 600V
STGW35NC120HD IGBT Transistors PowerMESH IGBT
STGW35NC60WD IGBT 600V 70A 260W TO247
STGW35NB60S IGBT 600V 70A 200W TO247
STGW35NB60SD GW35NB60SD New and Original
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