| PartNumber | STGW50HF60SD | STGW50HF60S | STGW50H60DF |
| Description | IGBT 600V 110A 284W TO247 | IGBT Transistors 60A 600V Very Low Drop IGBT 600Vces | IGBT Transistors 50A 600V FST IGBT Ultrafast Diode |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | IGBTs - Single | IGBTs - Single | IGBTs - Single |
| Series | 600-650V IGBTs | 600-650V IGBTs | 600-650V IGBTs |
| Packaging | Tube | Tube | Tube |
| Unit Weight | 6500 g | 0.229281 oz | 0.229281 oz |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package Case | TO-247 | TO-247-3 | TO-247-3 |
| Input Type | Standard | Standard | Standard |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | TO-247-3 | TO-247-3 | TO-247 |
| Configuration | Single | Single | - |
| Power Max | 284W | 284W | 360W |
| Reverse Recovery Time trr | 67ns | - | 55ns |
| Current Collector Ic Max | 110A | 110A | 100A |
| Voltage Collector Emitter Breakdown Max | 600V | 600V | 600V |
| IGBT Type | - | - | Trench Field Stop |
| Current Collector Pulsed Icm | 130A | 130A | 200A |
| Vce on Max Vge Ic | 1.45V @ 15V, 30A | 1.45V @ 15V, 30A | 1.8V @ 15V, 50A |
| Switching Energy | 250μJ (on), 4.2mJ (off) | 250μJ (on), 4.2mJ (off) | 890μJ (on), 860μJ (off) |
| Gate Charge | 200nC | 200nC | 217nC |
| Td on off 25°C | 50ns/220ns | 50ns/220ns | 62ns/178ns |
| Test Condition | 400V, 30A, 10 Ohm, 15V | 400V, 30A, 10 Ohm, 15V | 400V, 50A, 10 Ohm, 15V |
| Pd Power Dissipation | 284 W | 284 W | 360 W |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V | - |
| Collector Emitter Saturation Voltage | 1.15 V | 1.15 V | 1.8 V |
| Continuous Collector Current at 25 C | 110 A | 110 A | 100 A |
| Gate Emitter Leakage Current | +/- 100 nA | +/- 100 nA | 250 nA |
| Maximum Gate Emitter Voltage | +/- 20 V | +/- 20 V | +/- 20 V |