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| PartNumber | STGWA40H65DFB | STGWA40H60DLFB | STGWA40H65FB |
| Description | IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A high speed | IGBT Transistors | IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A high speed |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 650 V | 600 V | 650 V |
| Collector Emitter Saturation Voltage | 1.6 V | 1.6 V | 1.6 V |
| Maximum Gate Emitter Voltage | 20 V | 2 V | 20 V |
| Continuous Collector Current at 25 C | 80 A | - | 80 A |
| Pd Power Dissipation | 283 W | 283 W | 283 W |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Series | STGWA40H65DFB | STGWA40H60DLFB | STGWA40H65FB |
| Continuous Collector Current Ic Max | 80 A | 40 A | - |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Gate Emitter Leakage Current | +/- 250 nA | - | 250 nA |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 600 | 600 | 600 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 0.211644 oz | - | - |