| PartNumber | STL13N60DM2 | STL13N60M6 | STL13N60M2 |
| Description | MOSFET N-channel 600 V, 0.350 Ohm typ., 8 A MDmesh DM2 Power MOSFET in a PowerFLAT 5x6 HV package | MOSFET | MOSFET N-channel 600 V, 0.39 Ohm typ., 7 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | Y |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerFLAT-5x6-HV-8 | PowerFLAT5x6-4 | PowerFLAT-5x6-HV-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
| Id Continuous Drain Current | 8 A | 7 A | 7 A |
| Rds On Drain Source Resistance | 350 mOhms | 415 mOhms | 420 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3.25 V | 3 V |
| Vgs Gate Source Voltage | 25 V | 25 V | 25 V |
| Qg Gate Charge | 19 nC | 13 nC | 17 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 52 W | 52 W | 55 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | MDmesh | - | MDmesh |
| Packaging | Reel | - | Reel |
| Series | STL13N60DM2 | - | STL13N60M2 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Fall Time | 10.6 ns | 9.4 ns | 9.5 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 4.8 ns | 6.5 ns | 10 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 42.5 ns | 25.5 ns | 41 ns |
| Typical Turn On Delay Time | 12.3 ns | 15.8 ns | 11 ns |