| PartNumber | STP25N60M2-EP | STP25N10F7 | STP25N80K5 |
| Description | MOSFET N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220 package | MOSFET N-Ch 100V 0.027 Ohm typ 25A STripFET VII | MOSFET N-Ch 800V 0.19 Ohm 19.5 A MDmesh K5 |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 100 V | 800 V |
| Id Continuous Drain Current | 18 A | 25 A | 19.5 A |
| Rds On Drain Source Resistance | 188 mOhms | 35 mOhms | 260 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 4.5 V | 4 V |
| Vgs Gate Source Voltage | 25 V | 20 V | 30 V |
| Qg Gate Charge | 29 nC | 14 nC | 40 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 175 C | + 150 C |
| Pd Power Dissipation | 150 W | 50 W | 250 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | MDmesh | STripFET | MDmesh |
| Series | STP25N60M2-EP | STP25N10F7 | STP25N80K5 |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Fall Time | 16 ns | 4.6 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 10 ns | 14 ns | - |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 61 ns | 14.8 ns | - |
| Typical Turn On Delay Time | 15 ns | 9.8 ns | - |
| Unit Weight | 0.011640 oz | 0.011640 oz | 0.011640 oz |
| Packaging | - | Tube | Tube |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |