| PartNumber | STW69N65M5 | STW69N65M5-4 |
| Description | MOSFET N-Ch 650V 0.037 Ohm 58A MDMesh M5 MOS | MOSFET N-CH 650V 0.037Ohm 58A |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-4 |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 710 V |
| Id Continuous Drain Current | 58 A | 58 A |
| Rds On Drain Source Resistance | 45 mOhms | 37 mOhms |
| Pd Power Dissipation | 330 W | 330 W |
| Tradename | MDmesh | MDmesh |
| Packaging | Tube | Tube |
| Series | STW69N65M5 | STW69N65M5-4 |
| Brand | STMicroelectronics | STMicroelectronics |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 600 | 600 |
| Subcategory | MOSFETs | MOSFETs |
| Unit Weight | 1.340411 oz | - |
| RoHS | - | Y |
| Number of Channels | - | 1 Channel |
| Vgs th Gate Source Threshold Voltage | - | 4 V |
| Vgs Gate Source Voltage | - | 25 V |
| Qg Gate Charge | - | 143 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Configuration | - | Single |
| Transistor Type | - | 1 N-Channel |
| Fall Time | - | 11.5 ns |
| Rise Time | - | 10 ns |