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| PartNumber | T1G4012036-FL | T1G4012036-FS |
| Description | RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak | RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak |
| Manufacturer | Cree, Inc. | Qorvo |
| Product Category | RF JFET Transistors | RF JFET Transistors |
| RoHS | Y | Y |
| Transistor Type | HEMT | pHEMT |
| Technology | GaN SiC | GaAs |
| Gain | 17 dB | 10.4 dB |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 150 V | 12 V |
| Id Continuous Drain Current | 7.5 A | 517 mA |
| Output Power | 170 W | - |
| Maximum Operating Temperature | + 225 C | + 150 C |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | H-37265J-2 | - |
| Packaging | Reel | Gel Pack |
| Configuration | Single | Dual |
| Operating Frequency | 2620 MHz to 2690 MHz | 20 GHz |
| Brand | Wolfspeed / Cree | Qorvo |
| Product Type | RF JFET Transistors | RF JFET Transistors |
| Factory Pack Quantity | 250 | 100 |
| Subcategory | Transistors | Transistors |
| Vgs th Gate Source Threshold Voltage | - 3.8 V | - |
| Vgs Gate Source Breakdown Voltage | - | - 7 V |
| Minimum Operating Temperature | - | - 65 C |
| Pd Power Dissipation | - | 5.6 W |
| Operating Temperature Range | - | - 65 C to + 150 C |
| Product | - | RF JFET |
| Type | - | GaAs pHEMT |
| Forward Transconductance Min | - | 619 mS |
| Number of Channels | - | 2 Channel |
| P1dB Compression Point | - | 32.5 dBm |
| Part # Aliases | - | 1098617 |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Qorvo |
T1G4012036-FL | RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak | |
| T1G4012036-FS | RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak | ||
| T1G4012036-FL | RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak | ||
| T1G4012036-FS | RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak | ||
| T1G4012036-FS-EVB1 | New and Original | ||
| T1G4012036-XCC-1-FS | New and Original |