 |  |  | |
| PartNumber | TH58BVG2S3HTA00 | TH58BVG2S3HBAI6 | TH58BVG2S3HBAI4 |
| Description | NAND Flash 4Gb 24nm SLC NAND (EEPROM) | NAND Flash 4Gb 24nm SLC NAND (EEPROM) | NAND Flash 4Gb 24nm SLC NAND (EEPROM) |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | NAND Flash | NAND Flash | NAND Flash |
| RoHS | Y | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSOP-48 | VFBGA-67 | TFBGA-63 |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit |
| Interface Type | Parallel | Parallel | Parallel |
| Organization | 512 M x 8 | 512 M x 8 | 512 M x 8 |
| Data Bus Width | 8 bit | 8 bit | 8 bit |
| Supply Voltage Min | 2.7 V | 2.7 V | 2.7 V |
| Supply Voltage Max | 3.6 V | 3.6 V | 3.6 V |
| Minimum Operating Temperature | 0 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 70 C | + 85 C | + 85 C |
| Packaging | Tray | Tray | Tray |
| Memory Type | NAND | NAND | NAND |
| Product | NAND Flash | - | NAND Flash |
| Brand | Toshiba Memory | Toshiba Memory | Toshiba Memory |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | NAND Flash | NAND Flash | NAND Flash |
| Factory Pack Quantity | 96 | 338 | 210 |
| Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
| Timing Type | - | - | Synchronous |
| Supply Current Max | - | - | 30 mA |
| Speed | - | - | 25 ns |
| Architecture | - | - | Block Erase |
| Maximum Clock Frequency | - | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba Memory |
TH58BVG2S3HTA00 | NAND Flash 4Gb 24nm SLC NAND (EEPROM) | |
| TH58BVG2S3HTAI0 | NAND Flash 4Gb 24nm I-Temp SLC NAND (EEPROM) | ||
| TH58BVG3S0HTA00 | NAND Flash 8Gb 24nm SLC NAND (EEPROM) | ||
| TH58BVG3S0HTAI0 | NAND Flash 8Gb 24nm SLC NAND (EEPROM) | ||
| TH58BVG2S3HBAI6 | NAND Flash 4Gb 24nm SLC NAND (EEPROM) | ||
| TH58BVG2S3HBAI4 | NAND Flash 4Gb 24nm SLC NAND (EEPROM) | ||
| TH58BVG3S0HTA00 | EEPROM 8 Gbit CMOS NAND EEPROM | ||
| TH58BVG2S3HTAI0 | EEPROM 4 Gbit CMOS NAND EEPROM | ||
| TH58BVG2S3HTA00 | EEPROM 4 Gbit CMOS NAND EEPROM | ||
| TH58BVG2S3HBAI4 | 4GB SLC BENAND 24NM BGA 9X11 (EE Benand | ||
| TH58BVG3S0HTAI0 | Flash Memory 8 GBIT CMOS NAND EEPROM | ||
| TH58BVG3S0HTAI0B4H | TOSTH58BVG3S0HTAI0B4H 8 GBIT (1G × 8 BIT (Alt: TH58BVG3S0HTAI0B4H) | ||
| TH58BVG2S3HTA00(B4H) | New and Original | ||
| TH58BVG2S3HTA00_REEL | NAND Flash Memory (Alt: TH58BVG2S3HTA00_REEL) | ||
| TH58BVG2S3HTA00_TRAY | NAND Flash Memory (Alt: TH58BVG2S3HTA00_TRAY) | ||
| TH58BVG2S3HTAIO | New and Original | ||
| TH58BVG3S0FTA00 | New and Original | ||
| TH58BVG3S0HBAI4 | New and Original | ||
| TH58BVG3S0HBAI6 | New and Original | ||
| TH58BVG2S3HBAI4-ND | New and Original | ||
| TH58BVG2S3HTA00-ND | New and Original | ||
| TH58BVG2S3HTAI0-ND | New and Original | ||
| TH58BVG3S0HTA00-ND | New and Original | ||
| TH58BVG3S0HTAI0-ND | New and Original |