TK100E06

TK100E06N1,S1X vs TK100E06N1 vs TK100E06N1 S1X(S

 
PartNumberTK100E06N1,S1XTK100E06N1TK100E06N1 S1X(S
DescriptionMOSFET 60V N-Ch PWR FET 1.9mOhm 10V 10uAMOSFET N-CH 60V 100A U-MOS TO220, EA
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current1 mA--
Rds On Drain Source Resistance1.9 mOhms--
Vgs Gate Source Voltage10 V--
ConfigurationSingle--
TradenameDTMOSIV--
Height15.1 mm--
Length10.16 mm--
SeriesTK100E06N1--
Transistor Type1 N-Channel--
Width4.45 mm--
BrandToshiba--
Product TypeMOSFET--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Unit Weight0.211644 oz--
メーカー モデル 説明 RFQ
Toshiba
Toshiba
TK100E06N1,S1X MOSFET 60V N-Ch PWR FET 1.9mOhm 10V 10uA
TK100E06N1 MOSFET N-CH 60V 100A U-MOS TO220, EA
TK100E06N1 S1X(S ブランドニューオリジナル
TK100E06N1,S1X MOSFET 60V N-Ch PWR FET 1.9mOhm 10V 10uA
TK100E06N1S1X MOSFET POWER MOSFET TRANSISTOR
TK100E06N1S1X-ND ブランドニューオリジナル
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