TK11A45D(S

TK11A45D(STA4,Q,M) vs TK11A45D(STA4QM) vs TK11A45D(STA4QM)-ND

 
PartNumberTK11A45D(STA4,Q,M)TK11A45D(STA4QM)TK11A45D(STA4QM)-ND
DescriptionMOSFET N-Ch MOS 10A 40V 25W 410pF 0.029
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220FP-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage450 V--
Id Continuous Drain Current11 A--
Rds On Drain Source Resistance500 mOhms--
Vgs Gate Source Voltage30 V--
Qg Gate Charge20 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation40 W--
ConfigurationSingle--
Height15 mm--
Length10 mm--
SeriesTK11A45D--
Transistor Type1 N-Channel--
Width4.5 mm--
BrandToshiba--
Forward Transconductance Min0.8 S--
Fall Time10 ns--
Product TypeMOSFET--
Rise Time25 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time75 ns--
Typical Turn On Delay Time60 ns--
Manufacturer Part # Description RFQ
Toshiba
Toshiba
TK11A45D(STA4,Q,M) MOSFET N-Ch MOS 10A 40V 25W 410pF 0.029
TK11A45D(STA4,Q,M) IGBT Transistors MOSFET N-Ch MOS 10A 40V 25W 410pF 0.029
TK11A45D(STA4QM) New and Original
TK11A45D(STA4QM)-ND New and Original
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