TK13A60D(STA4

TK13A60D(STA4,Q,M) vs TK13A60D(STA4QM)

 
PartNumberTK13A60D(STA4,Q,M)TK13A60D(STA4QM)
DescriptionMOSFET N-Ch RDS 0.33 Ohm Yfs 6.5s 10uA 600V
ManufacturerToshiba-
Product CategoryMOSFET-
RoHSY-
TechnologySi-
Mounting StyleThrough Hole-
Package / CaseTO-220-3-
Number of Channels1 Channel-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage600 V-
Id Continuous Drain Current13 A-
Rds On Drain Source Resistance430 mOhms-
Vgs th Gate Source Threshold Voltage2 V-
Vgs Gate Source Voltage10 V-
Qg Gate Charge40 nC-
Maximum Operating Temperature+ 150 C-
Pd Power Dissipation50 W-
ConfigurationSingle-
Channel ModeEnhancement-
PackagingReel-
Height15 mm-
Length10 mm-
SeriesTK13A60D-
Transistor Type1 N-Channel-
Width4.5 mm-
BrandToshiba-
Fall Time25 ns-
Product TypeMOSFET-
Rise Time50 ns-
Factory Pack Quantity2500-
SubcategoryMOSFETs-
Typical Turn Off Delay Time140 ns-
Typical Turn On Delay Time100 ns-
Unit Weight0.059966 oz-
Manufacturer Part # Description RFQ
Toshiba
Toshiba
TK13A60D(STA4,Q,M) MOSFET N-Ch RDS 0.33 Ohm Yfs 6.5s 10uA 600V
TK13A60D(STA4,Q,M) MOSFET N-Ch RDS 0.33 Ohm Yfs 6.5s 10uA 600V
TK13A60D(STA4QM) New and Original
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