 |  | | |
| PartNumber | TK2P90E,RQS | TK2P90E | TK2P90E,RQ(S |
| Description | MOSFET N-Ch TT-MOSVIII 900V 80W 500pF 2A | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 900 V | - | - |
| Id Continuous Drain Current | 2 A | - | - |
| Rds On Drain Source Resistance | 4.7 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 12 nC | - | - |
| Minimum Operating Temperature | - | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 80 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | DTMOSIV | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.5 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 22 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 25 ns | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 70 ns | - | - |
| Typical Turn On Delay Time | 50 ns | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
TK2P90E,RQS | MOSFET N-Ch TT-MOSVIII 900V 80W 500pF 2A | |
| TK2P90E | New and Original | ||
| TK2P90E,RQ(S | New and Original | ||
| TK2P90ERQ(S | New and Original |