TK42A12

TK42A12N1,S4X vs TK42A12N1 vs TK42A12N1,S4X(S

 
PartNumberTK42A12N1,S4XTK42A12N1TK42A12N1,S4X(S
DescriptionMOSFET MOSFET NCh7.8ohm VGS10V10uAVDS120V
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220FP-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage120 V--
Id Continuous Drain Current42 A--
Rds On Drain Source Resistance7.8 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge52 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation35 W--
ConfigurationSingle--
Channel ModeEnhancement--
Height15 mm--
Length10 mm--
SeriesTK42A12N1--
Transistor Type1 N-Channel--
Width4.5 mm--
BrandToshiba--
Product TypeMOSFET--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Unit Weight0.211644 oz--
Manufacturer Part # Description RFQ
Toshiba
Toshiba
TK42A12N1,S4X MOSFET MOSFET NCh7.8ohm VGS10V10uAVDS120V
TK42A12N1,S4X MOSFET MOSFET NCh7.8ohm VGS10V10uAVDS120V
TK42A12N1 New and Original
TK42A12N1,S4X(S New and Original
TK42A12N1S4X New and Original
TK42A12N1S4X(S New and Original
TK42A12N1S4X-ND New and Original
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