 |  | |
| PartNumber | TK6A60D(STA4,Q,M) | TK6A60D(STA4,Q) |
| Description | MOSFET N-Ch FET 600V 3.0s IDSS 10 uA 1.0 Ohm | |
| Manufacturer | Toshiba | - |
| Product Category | MOSFET | - |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | Through Hole | - |
| Package / Case | TO-220-3 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | - |
| Id Continuous Drain Current | 6 A | - |
| Rds On Drain Source Resistance | 1.25 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - |
| Vgs Gate Source Voltage | 10 V | - |
| Qg Gate Charge | 16 nC | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 40 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Height | 15 mm | - |
| Length | 10 mm | - |
| Series | TK6A60D | - |
| Transistor Type | 1 N-Channel | - |
| Width | 4.5 mm | - |
| Brand | Toshiba | - |
| Fall Time | 12 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 20 ns | - |
| Factory Pack Quantity | 2500 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 60 ns | - |
| Typical Turn On Delay Time | 40 ns | - |
| Unit Weight | 0.211644 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
TK6A60D(STA4,Q,M) | MOSFET N-Ch FET 600V 3.0s IDSS 10 uA 1.0 Ohm | |
| TK6A60D(STA4,Q,M) | New and Original | ||
| TK6A60D(STA4,Q) | New and Original |