| PartNumber | TK8R2A06PL,S4X | TK8Q60W,S1VQ | TK8Q65W,S1Q |
| Description | MOSFET N-Ch 60V 1990pF 29nC 50A 34W | MOSFET DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC | MOSFET Power MOSFET N-Channel |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220FP-3 | TO-251-3 | TO-251-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 600 V | 650 V |
| Id Continuous Drain Current | 50 A | 8 A | 7.8 A |
| Rds On Drain Source Resistance | 6.1 mOhms | 420 mOhms | 550 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 3.7 V | 2.5 V |
| Vgs Gate Source Voltage | 20 V | 30 V | 30 V |
| Qg Gate Charge | 28.3 nC | 18.5 nC | 16 nC |
| Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
| Pd Power Dissipation | 36 W | 80 W | 80 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Height | 15 mm | 6.1 mm | 6.1 mm |
| Length | 10 mm | 6.65 mm | 6.65 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.5 mm | 2.3 mm | 2.3 mm |
| Brand | Toshiba | Toshiba | Toshiba |
| Fall Time | 17 ns | 5.5 ns | 4 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 5 ns | 20 ns | 20 ns |
| Factory Pack Quantity | 50 | 75 | 75 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 42 ns | 70 ns | 60 ns |
| Typical Turn On Delay Time | 19 ns | 40 ns | 40 ns |
| Unit Weight | 0.068784 oz | 0.139332 oz | 0.139332 oz |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Tradename | - | DTMOSIV | DTMOSIV |
| Series | - | TK8Q60W | TK8Q65W |
| Packaging | - | - | Tube |