 | | | |
| PartNumber | TMBT3906 | TMBT3906 LM | TMBT3906 LM T |
| Description | |||
| Manufacturer | Toshiba Semiconductor and Storage | - | - |
| Product Category | Transistors (BJT) - Single, Pre-Biased | - | - |
| Series | - | - | - |
| Packaging | Digi-ReelR Alternate Packaging | - | - |
| Package Case | TO-236-3, SC-59, SOT-23-3 | - | - |
| Mounting Type | Surface Mount | - | - |
| Supplier Device Package | SOT-23 | - | - |
| Power Max | 320mW | - | - |
| Transistor Type | PNP | - | - |
| Current Collector Ic Max | 150mA | - | - |
| Voltage Collector Emitter Breakdown Max | 50V | - | - |
| DC Current Gain hFE Min Ic Vce | 100 @ 10mA, 1V | - | - |
| Vce Saturation Max Ib Ic | 400mV @ 5mA, 50mA | - | - |
| Current Collector Cutoff Max | 100nA (ICBO) | - | - |
| Frequency Transition | 250MHz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
TMBT3906,LM | Bipolar Transistors - BJT Transistor for Low Freq. Amplification | |
| TMBT3906 | New and Original | ||
| TMBT3906 LM | New and Original | ||
| TMBT3906 LM T | New and Original | ||
| TMBT3906,LM | PB-F NCH SOT23F S-MOS (LF) TRA | ||
| TMBT3906LM | New and Original | ||
| TMBT3906LM(T | New and Original | ||
| TMBT3906LMCT-ND | New and Original | ||
| TMBT3906LMDKR-ND | New and Original | ||
| TMBT3906LMTR-ND | New and Original |