TN0110N3-G

TN0110N3-G vs TN0110N3-G P003 vs TN0110N3-G P005

 
PartNumberTN0110N3-GTN0110N3-G P003TN0110N3-G P005
DescriptionMOSFET 100V 3OhmRF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFETRF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
ManufacturerMicrochip-Microchip Technology
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-92-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current350 mA--
Rds On Drain Source Resistance3 Ohms--
Vgs th Gate Source Threshold Voltage600 mV--
Vgs Gate Source Voltage10 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1 W--
ConfigurationSingle--
Channel ModeEnhancement-Enhancement
PackagingBulk-Reel
Height5.33 mm--
Length5.21 mm--
Transistor Type1 N-Channel-1 N-Channel
TypeFET--
Width4.19 mm--
BrandMicrochip Technology--
Forward Transconductance Min225 mS--
Fall Time3 ns--
Product TypeMOSFET--
Rise Time3 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time6 ns--
Typical Turn On Delay Time2 ns--
Unit Weight0.016000 oz-0.016000 oz
Package Case--TO-92-3
Id Continuous Drain Current--350 mA
Vds Drain Source Breakdown Voltage--100 V
Rds On Drain Source Resistance--4.5 Ohms
Manufacturer Part # Description RFQ
Microchip Technology
Microchip Technology
TN0110N3-G-P002 MOSFET N-CH Enhancmnt Mode MOSFET
TN0110N3-G MOSFET 100V 3Ohm
TN0110N3-G-P002 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
TN0110N3-G P003 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
TN0110N3-G P005 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
TN0110N3-G P013 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
TN0110N3-G P014 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
TN0110N3-G MOSFET N-CH 100V 350MA TO92-3
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