TPH111

TPH1110ENH,L1Q vs TPH1110ENHL1Q vs TPH1110ENH

 
PartNumberTPH1110ENH,L1QTPH1110ENHL1QTPH1110ENH
DescriptionMOSFET UMOSVIII 200V 131m (VGS=10V) SOP-ADVMOSFET PWR MOSFET TRANSISTOR
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOP-Advance-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current13 A--
Rds On Drain Source Resistance96 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge7 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation42 W--
ConfigurationTriple--
Channel ModeEnhancement--
PackagingReel--
Height0.95 mm--
Length5 mm--
SeriesTPH1110ENH--
Transistor Type1 N-Channel--
Width5 mm--
BrandToshiba--
Fall Time4.5 ns--
Product TypeMOSFET--
Rise Time5.2 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time19 ns--
Typical Turn On Delay Time14 ns--
Unit Weight0.030018 oz--
Manufacturer Part # Description RFQ
Toshiba
Toshiba
TPH1110FNH,L1Q MOSFET X35PBF Power MOSFET Transistr95ohm250V
TPH1110ENH,L1Q MOSFET UMOSVIII 200V 131m (VGS=10V) SOP-ADV
TPH1110FNH,L1Q MOSFET X35PBF Power MOSFET Transistr95ohm250V
TPH1110ENH,L1Q MOSFET UMOSVIII 200V 131m (VGS=10V) SOP-ADV
TPH1110FNHL1Q MOSFET PWR MOSFET TRANSISTOR
TPH1110ENHL1Q MOSFET PWR MOSFET TRANSISTOR
TPH1110FNH New and Original
TPH1110FNH,L1Q(M New and Original
TPH1110ENH New and Original
TPH1110ENHL1QCT-ND New and Original
TPH1110ENHL1QDKR-ND New and Original
TPH1110ENHL1QTR-ND New and Original
TPH1110FNHL1QCT-ND New and Original
TPH1110FNHL1QDKR-ND New and Original
TPH1110FNHL1QTR-ND New and Original
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