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| PartNumber | TRS6E65C,S1AQ(S | TRS6E65C | TRS6E65C,S1AQ |
| Description | Schottky Diodes & Rectifiers SiC Schottky Diode | DIODE SCHOTTKY 650V 6A TO220-2L | |
| Manufacturer | Toshiba | Toshiba Semiconductor and Storage | - |
| Product Category | Schottky Diodes & Rectifiers | Diodes, Rectifiers - Single | - |
| RoHS | Y | - | - |
| Product | Schottky Silicon Carbide Diodes | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-2L | - | - |
| If Forward Current | 6 A | - | - |
| Vrrm Repetitive Reverse Voltage | 650 V | - | - |
| Vf Forward Voltage | 1.5 V | - | - |
| Ifsm Forward Surge Current | 80 A | - | - |
| Configuration | Single | - | - |
| Technology | SiC | - | - |
| Ir Reverse Current | 90 uA | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Series | TRS6E65C | - | - |
| Brand | Toshiba | - | - |
| Product Type | Schottky Diodes & Rectifiers | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | Diodes & Rectifiers | - | - |
| Vr Reverse Voltage | 650 V | - | - |
| Packaging | - | Tube | - |
| Package Case | - | TO-220-2 | - |
| Mounting Type | - | Through Hole | - |
| Supplier Device Package | - | TO-220-2L | - |
| Speed | - | Fast Recovery = 200mA (Io) | - |
| Diode Type | - | Silicon Carbide Schottky | - |
| Current Reverse Leakage Vr | - | 90μA @ 650V | - |
| Voltage Forward Vf Max If | - | 1.7V @ 6A | - |
| Voltage DC Reverse Vr Max | - | 650V | - |
| Current Average Rectified Io | - | 6A (DC) | - |
| Reverse Recovery Time trr | - | - | - |
| Capacitance Vr F | - | 35pF @ 650V, 1MHz | - |
| Operating Temperature Junction | - | 175°C (Max) | - |