| PartNumber | TSM2N60SCW RPG | TSM2N60ECH C5G | TSM2N60ECP ROG |
| Description | MOSFET 600V 2Amp 4ohm N channel Mosfet | MOSFET 600V 2Amp N channel Power Mosfet | MOSFET 600V 2Amp 4ohm N channel Power Mosfet |
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | Through Hole | SMD/SMT |
| Package / Case | SOT-223-3 | TO-251-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
| Id Continuous Drain Current | 600 mA | 2 A | 2 A |
| Rds On Drain Source Resistance | 3.6 Ohms | 3.2 Ohms | 3.2 Ohms |
| Vgs th Gate Source Threshold Voltage | 2 V | 3 V | 3 V |
| Vgs Gate Source Voltage | 10 V | 10 V | 10 V |
| Qg Gate Charge | 13 nC | 9.5 nC | 9.5 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 2.5 W | 52.1 W | 52.1 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Tube | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Fall Time | 24 ns | 21 ns | 21 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 21 ns | 22 ns | 22 ns |
| Factory Pack Quantity | 2500 | 3750 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 30 ns | 41 ns | 41 ns |
| Typical Turn On Delay Time | 12 ns | 21 ns | 21 ns |
| Unit Weight | 0.009171 oz | 0.011993 oz | 0.011993 oz |