| PartNumber | TSM9N90ECI C0G | TSM9N90ECZ C0G | TSM9NB50CI C0G |
| Description | MOSFET 900V 9Amp 1.4 N channel Mosfet | MOSFET 900V 9Amp 1,4ohm N channel Mosfet | MOSFET 500V 9Amp N channel Mosfet |
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | ITO-220-3 | TO-220-3 | ITO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 900 V | 900 V | 500 V |
| Id Continuous Drain Current | 9 A | 9 A | 9 A |
| Rds On Drain Source Resistance | 1.13 Ohms | 1.13 Ohms | 720 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2.5 V |
| Vgs Gate Source Voltage | 10 V | 10 V | 10 V |
| Qg Gate Charge | 72 nC | 72 nC | 44 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 89 W | 290 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Fall Time | 159 ns | 159 ns | 5.7 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 97 ns | 97 ns | 46.8 ns |
| Factory Pack Quantity | 2000 | 2000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 212 ns | 212 ns | 13.3 ns |
| Typical Turn On Delay Time | 52 ns | 52 ns | 27.4 ns |
| Unit Weight | 0.059966 oz | 0.063493 oz | - |