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| PartNumber | TT8J21TR | TT8J21 | TT8J21 FU7TL |
| Description | MOSFET P Chan-20V-2.5A Mid-PowerSwitching | ||
| Manufacturer | ROHM Semiconductor | Rohm Semiconductor | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSST-8 | - | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 2.5 A | - | - |
| Rds On Drain Source Resistance | 68 mOhms | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.25 W | - | - |
| Configuration | Dual | Dual Dual Drain | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 0.8 mm | - | - |
| Length | 3 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Transistor Type | 2 P-Channel | 2 P-Channel | - |
| Width | 1.6 mm | - | - |
| Brand | ROHM Semiconductor | - | - |
| Fall Time | 30 ns | 30 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 30 ns | 30 ns | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 120 ns | 120 ns | - |
| Typical Turn On Delay Time | 9 ns | 9 ns | - |
| Part # Aliases | TT8J21 | - | - |
| Series | - | TT8J21 | - |
| Package Case | - | 8-SMD, Flat Lead | - |
| Operating Temperature | - | 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | 8-TSST | - |
| FET Type | - | 2 P-Channel (Dual) | - |
| Power Max | - | 650mW | - |
| Drain to Source Voltage Vdss | - | 20V | - |
| Input Capacitance Ciss Vds | - | 1270pF @ 10V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 2.5A | - |
| Rds On Max Id Vgs | - | 68 mOhm @ 2.5A, 4.5V | - |
| Vgs th Max Id | - | 1V @ 1mA | - |
| Gate Charge Qg Vgs | - | 12nC @ 4.5V | - |
| Pd Power Dissipation | - | 1.25 W | - |
| Vgs Gate Source Voltage | - | 10 V | - |
| Id Continuous Drain Current | - | 2.5 A | - |
| Vds Drain Source Breakdown Voltage | - | - 20 V | - |
| Rds On Drain Source Resistance | - | 68 mOhms | - |