TTA0002

TTA0002(Q) vs TTA0002(Q)-ND vs TTA0002

 
PartNumberTTA0002(Q)TTA0002(Q)-NDTTA0002
DescriptionBipolar Transistors - BJT BJT PNP -18A 180W 80 HFE -2V Trans
ManufacturerToshiba--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / Case2-21F1A-3--
Transistor PolarityPNP--
Collector Emitter Voltage VCEO Max- 160 V--
Collector Base Voltage VCBO- 160 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 2 V--
Maximum DC Collector Current- 18 A--
Gain Bandwidth Product fT30 MHz--
SeriesTTA0002--
DC Current Gain hFE Max160--
PackagingBulk--
BrandToshiba--
Continuous Collector Current- 18 A--
DC Collector/Base Gain hfe Min80--
Pd Power Dissipation180 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity100--
SubcategoryTransistors--
Unit Weight0.343921 oz--
Manufacturer Part # Description RFQ
Toshiba
Toshiba
TTA0002(Q) Bipolar Transistors - BJT BJT PNP -18A 180W 80 HFE -2V Trans
TTA0002(Q)-ND New and Original
TTA0002(Q) Bipolar Transistors - BJT PNP -35A 180W 80 HFE -2V Trans
TTA0002 New and Original
Top