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| PartNumber | TTA0002(Q) | TTA0002(Q)-ND | TTA0002 |
| Description | Bipolar Transistors - BJT BJT PNP -18A 180W 80 HFE -2V Trans | ||
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | 2-21F1A-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Collector Emitter Voltage VCEO Max | - 160 V | - | - |
| Collector Base Voltage VCBO | - 160 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Collector Emitter Saturation Voltage | - 2 V | - | - |
| Maximum DC Collector Current | - 18 A | - | - |
| Gain Bandwidth Product fT | 30 MHz | - | - |
| Series | TTA0002 | - | - |
| DC Current Gain hFE Max | 160 | - | - |
| Packaging | Bulk | - | - |
| Brand | Toshiba | - | - |
| Continuous Collector Current | - 18 A | - | - |
| DC Collector/Base Gain hfe Min | 80 | - | - |
| Pd Power Dissipation | 180 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 100 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.343921 oz | - | - |