TTA1943(Q

TTA1943(Q) vs TTA1943(Q)-ND vs TTA1943(Q)+TTC5200(Q)

 
PartNumberTTA1943(Q)TTA1943(Q)-NDTTA1943(Q)+TTC5200(Q)
DescriptionBipolar Transistors - BJT PNP 150W -15A 80 HFE -3V -230V
ManufacturerToshiba--
Product CategoryBipolar Transistors - BJT--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / Case2-21F1A-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 230 V--
Collector Base Voltage VCBO- 230 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 3 V--
Maximum DC Collector Current- 15 A--
Gain Bandwidth Product fT30 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesTTA1943--
DC Current Gain hFE Max160--
PackagingBulk--
BrandToshiba--
Continuous Collector Current- 15 A--
DC Collector/Base Gain hfe Min80--
Pd Power Dissipation150 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity100--
SubcategoryTransistors--
Unit Weight0.194007 oz--
Manufacturer Part # Description RFQ
Toshiba
Toshiba
TTA1943(Q) Bipolar Transistors - BJT PNP 150W -15A 80 HFE -3V -230V
TTA1943(Q) Bipolar Transistors - BJT PNP 150W -15A 80 HFE -3V -230V
TTA1943(Q)-ND New and Original
TTA1943(Q)+TTC5200(Q) New and Original
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