| PartNumber | UF3C065030K3S | UF3C065030K4S | UF3C065030B3 |
| Description | MOSFET 30mOhm 650V 85A SiC Cascode Fast | MOSFET 650V 30m? SiC Cascode Fast | MOSFET 650V 27mOhm SiC Cascode |
| Manufacturer | UnitedSiC | UnitedSiC | UnitedSiC |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | SiC | SiC | SiC |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | TO-247-4 | D2PAK-3 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | 650 V |
| Id Continuous Drain Current | 85 A | 85 A | 65 A |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube | Tube |
| Series | UF3C | UF3C | UF3C |
| Brand | UnitedSiC | UnitedSiC | UnitedSiC |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Rds On Drain Source Resistance | - | 35 mOhms | 27 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Vgs Gate Source Voltage | - | 25 V | 25 V |
| Qg Gate Charge | - | 51 nC | 51 nC |
| Minimum Operating Temperature | - | - 55 C | - 25 C |
| Maximum Operating Temperature | - | + 175 C | + 175 C |
| Pd Power Dissipation | - | 441 W | 242 W |
| Qualification | - | AEC-Q101 | - |
| Transistor Type | - | 1 N-Channel | - |
| Fall Time | - | 12 ns | 15 ns |
| Rise Time | - | 31 ns | 16 ns |
| Typical Turn Off Delay Time | - | 48 ns | 57 ns |
| Typical Turn On Delay Time | - | 25 ns | 32 ns |