UMG4N

UMG4N-7 vs UMG4N vs UMG4N TR

 
PartNumberUMG4N-7UMG4NUMG4N TR
DescriptionBipolar Transistors - Pre-Biased 150mW 100mA
ManufacturerDiodes Incorporated--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationDual Common Emitter--
Transistor PolarityNPN--
Typical Input Resistor10 kOhms--
Mounting StyleSMD/SMT--
Package / CaseSOT-353-5--
DC Collector/Base Gain hfe Min100--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA--
Peak DC Collector Current100 mA--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesUMG4N--
PackagingReel--
DC Current Gain hFE Max600--
Height1 mm--
Length2.2 mm--
Width1.35 mm--
BrandDiodes Incorporated--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000212 oz--
Manufacturer Part # Description RFQ
UMG4NTR Bipolar Transistors - Pre-Biased DUAL NPN 50V 100MA SOT-353
UMG4N New and Original
UMG4N TR New and Original
UMG4NTR , MAX6751KA16 New and Original
UMG4NTR/G4 New and Original
UMG4N-7 TRANS 2NPN PREBIAS 0.15W SOT353
UMG4NTR TRANS 2NPN PREBIAS 0.15W UMT5
Diodes Incorporated
Diodes Incorporated
UMG4N-7 Bipolar Transistors - Pre-Biased 150mW 100mA
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