UMT3906T

UMT3906T106 vs UMT3906T vs UMT3906T106-RM-LF

 
PartNumberUMT3906T106UMT3906TUMT3906T106-RM-LF
DescriptionBipolar Transistors - BJT PNP 40V 0.2A
ManufacturerROHM SemiconductorRohm Semiconductor-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-323-3--
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 40 V--
Collector Base Voltage VCBO- 40 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 0.4 V- 0.4 V-
Maximum DC Collector Current0.2 A0.2 A-
Gain Bandwidth Product fT250 MHz250 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesUMT3906UMT3906-
DC Current Gain hFE Max300300-
Height0.8 mm--
Length2 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width1.25 mm--
BrandROHM Semiconductor--
Continuous Collector Current- 0.2 A- 0.2 A-
DC Collector/Base Gain hfe Min30--
Pd Power Dissipation6.2 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesUMT3906--
Unit Weight0.000176 oz0.000988 oz-
Package Case-SC-70, SOT-323-
Mounting Type-Surface Mount-
Supplier Device Package-UMT3-
Power Max-200mW-
Transistor Type-PNP-
Current Collector Ic Max-200mA-
Voltage Collector Emitter Breakdown Max-40V-
DC Current Gain hFE Min Ic Vce-100 @ 10mA, 1V-
Vce Saturation Max Ib Ic-400mV @ 5mA, 50mA-
Current Collector Cutoff Max-50nA-
Frequency Transition-250MHz-
Pd Power Dissipation-6.2 W-
Collector Emitter Voltage VCEO Max-- 40 V-
Collector Base Voltage VCBO-- 40 V-
Emitter Base Voltage VEBO-- 5 V-
DC Collector Base Gain hfe Min-30-
Manufacturer Part # Description RFQ
UMT3906T106 Bipolar Transistors - BJT PNP 40V 0.2A
UMT3906T New and Original
UMT3906T106-RM-LF New and Original
UMT3906T106TR New and Original
UMT3906T106 TRANS PNP 40V 0.2A SOT-323
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