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| PartNumber | VS-GB100TS60NPBF | VS-GB100TH120N | VS-GB100TP120N |
| Description | IGBT Modules 108 Amp 600 Volt Half-Bridge | IGBT Modules Output & SW Modules - DIAP IGBT | IGBT Modules Output & SW Modules - IAP IGBT |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | - | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | Dual | Half Bridge | Half Bridge |
| Collector Emitter Voltage VCEO Max | 600 V | 1.2 kV | 1.2 kV |
| Continuous Collector Current at 25 C | 108 A | 200 A | 200 A |
| Package / Case | INT-A-PAK | INT-A-PAK | INT-A-PAK |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Packaging | Bulk | - | - |
| Height | 30 mm | - | - |
| Length | 94 mm | - | - |
| Width | 35 mm | - | - |
| Brand | Vishay Semiconductors | Vishay Semiconductors | Vishay Semiconductors |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 15 | 12 | 24 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Tradename | HEXFRED | - | - |
| Part # Aliases | GB100TS60NPBF | - | - |
| Unit Weight | 7.054792 oz | - | - |
| Collector Emitter Saturation Voltage | - | 1.9 V | 1.8 V |
| Gate Emitter Leakage Current | - | 400 nA | 400 nA |
| Pd Power Dissipation | - | 833 W | 650 W |