VS-GB9

VS-GB90SA120U vs VS-GB90DA120U vs VS-GB90DA60U

 
PartNumberVS-GB90SA120UVS-GB90DA120UVS-GB90DA60U
DescriptionIGBT Modules Output & SW Modules - SOT-227 IGBTIGBT Transistors 1200 Volt 90 AmpIGBT Transistors 600 Volt 90 Amp
ManufacturerVishayVishayVishay
Product CategoryIGBT ModulesIGBT TransistorsIGBT Transistors
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1.2 kV--
Collector Emitter Saturation Voltage3.3 V--
Continuous Collector Current at 25 C149 A--
Gate Emitter Leakage Current250 nA--
Pd Power Dissipation862 W--
Package / CaseSOT-227-4--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTubeTubeTube
BrandVishay SemiconductorsVishay SemiconductorsVishay Semiconductors
Mounting StyleSMD/SMT--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT ModulesIGBT TransistorsIGBT Transistors
Factory Pack Quantity101010
SubcategoryIGBTsIGBTsIGBTs
Unit Weight1.058219 oz--
RoHS-YY
Technology-SiSi
Series-VS-GBVS-GB
Tradename-HEXFREDHEXFRED
Part # Aliases-GB75DA120UPGB100DA60UP
Manufacturer Part # Description RFQ
Vishay Semiconductors
Vishay Semiconductors
VS-GB90SA120U IGBT Modules Output & SW Modules - SOT-227 IGBT
VS-GB90DA120U IGBT Transistors 1200 Volt 90 Amp
VS-GB90DA60U IGBT Transistors 600 Volt 90 Amp
Vishay
Vishay
VS-GB90SA120U TRANSISTOR INSLTED GATE BIPOLAR
VS-GB90DA120U IGBT Transistors 1200 Volt 90 Amp
VS-GB90DA60U IGBT Transistors 600 Volt 90 Amp
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