ZUMT618

ZUMT618TA vs ZUMT618 vs ZUMT618TA-

 
PartNumberZUMT618TAZUMT618ZUMT618TA-
DescriptionBipolar Transistors - BJT NPN Super323
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-323-3--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max20 V--
Collector Base Voltage VCBO20 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage155 mV155 mV-
Maximum DC Collector Current1.25 A1.25 A-
Gain Bandwidth Product fT210 MHz210 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesZUMT618ZUMT618-
Height1 mm--
Length2.2 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width1.26 mm--
BrandDiodes Incorporated--
Continuous Collector Current1.25 A1.25 A-
Pd Power Dissipation500 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000176 oz0.000212 oz-
Package Case-SC-70, SOT-323-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-323-
Power Max-385mW-
Transistor Type-NPN-
Current Collector Ic Max-1.25A-
Voltage Collector Emitter Breakdown Max-20V-
DC Current Gain hFE Min Ic Vce-200 @ 500mA, 2V-
Vce Saturation Max Ib Ic-250mV @ 50mA, 1.25A-
Current Collector Cutoff Max-10nA-
Frequency Transition-210MHz-
Pd Power Dissipation-500 mW-
Collector Emitter Voltage VCEO Max-20 V-
Collector Base Voltage VCBO-20 V-
Emitter Base Voltage VEBO-5 V-
DC Collector Base Gain hfe Min-200 at 10 mA at 2 V 300 at 100 mA at 2 V 200 at 500 mA at 2 V 100 at 1 A at 2 V 40 at 2 A at 2 V 20 at 4 A at 2 V-
DC Current Gain hFE Max-200 at 10 mA at 2 V-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
ZUMT618TA Bipolar Transistors - BJT NPN Super323
ZUMT618TC Bipolar Transistors - BJT NPN Super323
ZUMT618 New and Original
ZUMT618TA- New and Original
ZUMT618TA-CUT TAPE New and Original
ZUMT618TA Bipolar Transistors - BJT NPN Super323
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