 | |  | |
| PartNumber | ZVN4210GTA | ZVN4210GTC | ZVN4210G |
| Description | MOSFET N-Chnl 100V | MOSFET N-Chnl 100V | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-223-3 | SOT-223-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 800 mA | 800 mA | - |
| Rds On Drain Source Resistance | 1.8 Ohms | 1.8 Ohms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2 W | 2 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Height | 1.65 mm | - | - |
| Length | 6.7 mm | - | - |
| Series | ZVN4210 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | FET | FET | - |
| Width | 3.7 mm | - | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Fall Time | 30 ns | 30 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 8 ns | 8 ns | - |
| Factory Pack Quantity | 1000 | 4000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 20 ns | 20 ns | - |
| Typical Turn On Delay Time | 4 ns | 4 ns | - |
| Unit Weight | 0.003951 oz | 0.003951 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
ZVN4210GTA | MOSFET N-Chnl 100V | |
| ZVN4210GTC | MOSFET N-Chnl 100V | ||
| ZVN4210G | New and Original | ||
| ZVN4210GTA | Darlington Transistors MOSFET N-Chnl 100V |